1 Microwave nW power sensor uses low barrier schottky diode(LBSD) as a component for testing the power of microwave signals.

2 We started with the traditional modeling methods for Schottky diode and the small-signal model had been extracted by using optimization method.

3 The Schottky diode and the method of making same same can meet the requirements of metal-oxide-semiconductor process and be suitable for integrated production of sub-micro IC also.

4 Also, the added schottky diode can be easily realized by schottky contact in the drain of the NMOSFET, which does not add chip area.

5 The schottky diode bypasses the gate resistor in the gate discharge path, so that there is no falling edge delay. The delay at the rising edge adds dead time.

6 A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.

7 In this thesis, we mainly discussed the technologies of modeling and simulation for Schottky diode, and then the design of Schottky doubler.

8 The main products are: rectifier diodes, switching diodes, high efficiency diode, trigger diode, Schottky diode, electricity-saving lamps special diode, switching power supply special diode.

9 In this paper, some new multiple diode, such as varicap diode, switching diode, diode array, damper diode, modulation diode and Schottky diode are discussed.

10 The passive IC's power supply is taken from the energy of the received RF electromagnetic field with the help of a Schottky diode rectifier.

11 A new ultra-wideband(UWB) Gaussian pulse generator composed of a step recovery diode(SRD), a field-effect transistor(FET) and a Schottky diode was developed.