1. The firm excels at producing cheap transistor radios.

2. She took her transistor everywhere with her.

3. This factory entered into transistor production more than forty years ago.

4. The transistor was a nice touch!

5. The transistor should have a clip-on heatsink.

6. Furthermore, the availability of cheap transistors makes obtaining maximum power gain through each transistor rather unimportant in any case.

7. The phase winding is excited whenever its switching transistor is saturated by a sufficiently high base current.

8. He disliked the transistor radio he'd saved up for to get Lavinia for her birthday three years ago.

9. At the beginning of the excitation interval the transistor T1 is switched on and the base drive to T2 is enabled.

10. Such all-embracing inventions as the transistor, X-rays and nuclear magnetic resonance spectroscopy all come into this category.

11. The advent of the transistor brought rapid expansion in set ownership.

12. The two heatsinks for the Darlington transistor and diode D1 should also be readily available.

13. Lines of washing hung between the caravans, transistor radios played loudly.

14. These sets are no bigger than a transistor radio and cost as little as $ 100 at the nearby discount electronics store.

15. Also his transistor radio and his pocket piece of purple fluorite.

16. Similarly, the transistor took decades to become incorporated into commercial products such as hearing aids, navigational instruments and computers.

17. Roosters crowed, transistor radios were turned full volume to occupy the minutes of the unemployed.

17. is a sentence dictionary, on which you can find good sentences for a large number of words.

18. It will probably never build the 2.8m transistor 601, which is projected to have a three-year life cycle.

19. We must give great care upon transistor biasing.

20. A bipolar transistor and its fabrication are described.

21. They had a battery - powered transistor radio.

22. Second breakdown mechanisms of bipolar power transistor is summarized.

23. Silicon complementary PNP transistor. Audio power amplifier.

24. This transistor radio has four small cells.

25. The neural MOS transistor fully develop the floating-gate technique.

26. The wrappings had come off: it was a shattered transistor radio.

27. Unlike the press, it engaged in little self-promotion, but commercial companies helped through their advertising of transistor radios.

28. More stories, more coffee and another try with Pete's transistor radio.

29. In other words, they only respond to the differential of input signal waveforms to create single transistor hi-pass filters.

30. It is less easy to forgive the carriers of blaring transistor radios, a sacrilege in such surroundings.

31. I want a Japanese 3 band transistor radio, please.

32. Only one external transistor is required for varactor-line driving.

33. Fewer electrical heating appliances, plenty of transistor radio sets.

34. Silicon darlington PNP transistor. High current, general purpose.

35. The transistor is an amplifier.

36. Have you a transistor radio in your home?

37. Dual P-channel enhancement mode MOS transistor.

38. This transistor radio was made by Li Ming.

39. Silicon complementary PNP transistor. Audio amplifier and driver.

40. Silicon complementary NPN transistor. Audio amplifier, driver.

41. The chip size is prevented from increasing, and temperature dependence of a MOS transistor is compensated for while the power consumption is kept from increasing.

42. This transistor wireless set is the last word in technical skill.

43. The status in quo of Impulse Ground Penetrating Radar and the general principle of Avalanche Transistor are discussed then a new method for Avalanche simulation is given in this thesis.

44. Field-Effect Transistor Memory This patent was issued to IBM inventor Robert Dennard June 4, 1968, for inventing a one-transistor dynamic RAM cell, which became the standard for computer memory.

45. Using both pure poly emitter and heavily doped base, a CMOS-compatible silicon bipolar transistor is implemented, which has low base resistance and is suitable for low temperature operation.

46. Neurochip is a new technology of studying the electrical activities of nerve cells and advanced functions of brain, such as learning and memory by combining with field-effect transistor technique.

47. In 1956, the birth of the transistor computer, which is the second-generation computer.

47. is a sentence dictionary, on which you can find good sentences for a large number of words.

48. A bipolar junction transistor relates to the technical field of a semiconductor power device.

49. One inherent limitation of the forward converter is that the transformer must be reset during the power transistor off period. Thus, additional reset circuitry has to be used.

50. In addition, this kind exceeds electric current to still can be controlled by door voltage place, make its are become exceed voltaic transistor.

51. By adding a transistor with some capacitors, diodes, and resistors, you can transform a pure-manual reset to an automatic reset with adjustable hold time for the reset IC.

52. The invention discloses an organic field - effect transistor and a preparation method thereof.

53. Reflectional visible light sensor that can magnify the intensity of reflectional light by Darlington transistor is adopted in the sensor module.

54. This system can be also used for the automatic control of the electro plating and aluminum anodizing process and the DC characteristic measurement of some semiconductor transistor.

55. Insulated Gate Bipolar Transistor ( IGBT ) as controllable switch, has been applied widely.

56. The success of the transistor and advances in solid-state physics provided the foundation for another new technology, integrated circuits, IC's.

57. An improved plan of silicon controlled rectifier(SCR)line type trigger is described in detail. Anew practical circuit of bipolar transistor trigger for high pulse repeat frequency is presented.

58. The voltage lifting device controls grid electrodes of the first MOS transistor and the second MOS transistor.

59. Energy gap and minority-carrier recombination lifetime are important physical parameters in the emitter of silicon transistor.

60. In this paper a new equivalent circuit model is constructed within a multi-MOS model for simulation of IGBT (Insulated Gate Bipolar Transistor) current sensors.

61. Composite transistor, composite-transistor pair, current squarer, and CMOS analog multiplier.

62. Step five: tune the final stage power transistor quiescent current, the current value of the power tube by measuring the voltage of the emitter resistance Converter and get.

63. Use them virtually any place where you need a protected power transistor.

64. I-V characteristics of the heterojunction bipolar transistor(HBT) are presented to account for self-heating effect of RF power HBT's.

65. It makes use of digital pulse IC circuits to replace the old transistor oscillator circuits and has great improvement in stability, security and convenience.

66. A first embodiment of the present invention includes an NMOS transistor, a PMOS transistor, and a bipolar transistor formed on different areas of the substrate.

67. By this concept, we design a photo MOS transistor which can be turn on only by illumination instead applying voltage on gate.

68. In particular, as a high-power EMP is suddenly injected into a transistor, electrical or thermal breakdown can be definitely caused.

69. A heating element is designed using resistance heating silk and printed board, and an instrument of temperature measurement and control is designed using transistor as the temperature sensor.

70. Are you familiar with the performance of this type of transistor amplifier?

71. In a bipolar transistor , the control area or the electrical connection to the control area.

72. The sound resembled a badly tuned transistor radio in a tin bucket, though elsewhere in the ceremony, and particularly when Placido Domingo sang, beautifully, it was perfectly acceptable.

73. Water is a safe, common element, so when and if the technology takes off, it would need, and create, less toxicity than current transistor technology.

74. These data and results are helpful to design and develop spin field effect transistor, spin light-emitting diode, spin resonant tunneling device, etc.

75. Simultaneously the identical claw hook can snatch up and lower down the transistor frames of various widths, and the compatibility is stronger.

76. Electronic control unit. Contains a switching transistor controlled by a speed sensor and is used to open and close the primary circuit.

77. It is usually implemented with a resistor or current source, a capacitor, and a "threshold" device such as a neon lamp, diac unijunction transistor, or Gunn diode.

77. is a online sentence dictionary, on which you can find good sentences for a large number of words.

78. Transistor high frequency generator, fast heating speed, high efficiency, low power consumption.

79. Finally, the operation precision of the device is analyzed, the conclusion that the parasitical capacitor of the MOS transistor is the main factor to affect the precision is obtained.

80. The thinking and methods of designing a transistor amplifier with LC resonance network are presented.

81. This article introduces the methods of checking integrate circuit module and single crystal transistor.

82. The main product is zener diode series, schottky barrier diode series, Transistor series, MosFET series, controlled silicon series, IC series.

83. The plurality of individual DMOS transistor cells is dividable into peripheral transistor cells and interior transistor cells.

84. The paper analyses the electric circuit and the working principle of the avalanche of the bipolar transistor of the pulser with a cascade connected bipolar transistor structure.

85. It is compositive still transistor of two in - house low saturated PNP double raceway groove charges function.

86. An efficient, self-consistent method of Monte Carlo and Poisson equation is used to simulate the electrical characteristic of deep submicron metal-oxide-semiconductor field effect Transistor(MOSFET).

87. At present, leading-edge chip makers are using conventional bulk CMOS and planar transistor structures for the 32-/28-nm nodes and above. For years, chip makers have used bulk CMOS.

88. The transistor also comprises a drain region of the first conductivity type and electrically communicating with a second semiconductor region that differs from the first semiconductor region.

89. IBM launched the personal computer system in a Pig year (1983) and the transistor and self-starter motor were also invented in Pig years: 2007 will hold more major inventions.

90. Hundreds of people huddled around a single transistor radio listening to the announcement.

91. Silicon epitaxial planar transistor, for use in audio and general purpose.

92. The circuit also includes a second subcircuit that causes a second transistor (25) that is coupled to the circuit's output (34) to turn on during a falling transition and then turn off.

93. Today, the usual low noise design is to chose transistor and its quiescent point in order to ensure that the noise resistance equals the signal source resistance.

94. A transistor circuit for an array device comprises a plurality of thin film transistors electrically connected in parallel and provided on a common substrate.

95. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage.

96. Brattain : american physicist. He shared a 1956 Nobel Prize for developing the electronic transistor.

97. Thank you for your inquiry of September 23 concerning transistor radio sets.

98. A hetero-structure field effect transistor (HFET), may include a first layer (3) made from a first semiconductor material and a second layer (4) made from a second semiconductor material.

99. The welding quality between the chip sad the base of power transistor inspected by radiographic testing was described.

100. World's first semiconductor rectifier and the transistor is, when no power semiconductor or microelectronics semiconductor division.

101. An NPN transistor can be considered as two diodes with a shared anode region.

102. Throughtuning the grid-voltage of MOS transistor, we can tune the equivalent resistance, accordingly tuning the cut-off frequency of the filter.

103. A transistor has three electrodes, the emitter , base and the collector.

104. Metal wire bonding interconnection is the key means in the internal matching technology of RF power transistor.

105. Silicon epitaxial planar transistor. High power, high frequency, audio and general purpose.

106. This paper describes the unload circuits which are used in power transistor (SOA). RCD unload circuit and a novel unload circuit without energy losses are presented, their effects are discussed.

107. In a drive system of power transistor inverter-motor, not only can it be used in fine control of motor current waveform, phase, amplitude and frequency, but can also be used to sense, fault current.

108. A depleted NMOS transistor, which was used as current source, and a negative feedback loop constitute a stable voltage reference.

109. An effective way to reduce the leakage power is by means of multithreshold CMOS technique, which can restrain the leakage current by adding a MOS transistor to low threshold circuit.

110. Using these expressions numerical calculations were carried out for two types of commonly used transistor Schmitt circuit.

111. Major conclusion is: it is possible to achieve ideal vertical PNP transistor by appropriately re-arranging process steps without affecting the original structure.

112. Each of the individual transistor cells includes a body region located on the substrate, which has a second conductivity type.

113. Digital Logic Isolation. Line Receiver. Power Supply Control Feedback Control . Switching Power Supply. Transistor Invertor.

114. They are used for gating and also as current limiting for the base of each transistor.

115. The welding quality between the chip and the base of power transistor inspected by radiographic testing was described.

116. The factors of MOS transistor in the saturation region are analyzed, the mismatch models are optimized, and the model parameter extraction is done by least squares curve fitting method.

117. In chapter 4, the circuit of the carrier synchronization unit is implemented on FPGA, the Resistor Transistor Logic (RTL) schemes are presented.

118. Switching time of the new - type transistor is shortened five times.

119. The transistor pulse generator power supply is now commonly employed as a UEDM power supplier.

120. Transistor amplifier circuit has oscillation preventing diode connected to connecting wire of 2 transistors to prevent inductance due to wire length.

121. Moreover, the collector of switching transistor is also connected to an output end of PG signal directly. The emitter is also connected to an input end of a control signal directly.

122. And when the mixture is used for semiconducting, as in a transistor, the excess current from the conducting nanotubes will short the device.

123. The invention discloses a method for manufacturing a complementary metal oxide semiconductor ( CMOS ) transistor.

124. One of the important research directions is the fabrication of nano electrical devices including transistor and sensor by bottom-up method using carbon nanotubes as building block.

125. In the test of breakdown voltage of power transistor with SIPOS passivation layer before packaging, an abnormal curve of breakdown voltage was found, which was a double-line breakdown voltage curve.

126. 50 years ago, the first Chinese made alloy junction Germanium PNP transistor was born in the Semiconductor Laboratory of the Institute of Applied Physics, Beijing.

127. It is an improvement with comparison to the unvaried transistor voltage regulators.

128. To replace Q1 with a different power-switching device, such as an NPN bipolar transistor or a relay, specify Q2 to provide the control current that the switching device requires.

129. When the voltage across the cap exceeds the reference voltage, the comparator momentarily triggers the transistor which shorts out the cap, discharging it back to the starting voltage.

130. Note: P1.0 port by the MCU output audio signal, the P1.0 port access transistor to drive the speakers, the best form with two Darlington transistor structure.

131. The transistor meant more powerful, more reliable, and less expensive computers that would occupy less space and give off less heat than did vacuum-tube-powered computers.

132. There are two kinds of supply modes of collecting electrode resistance (inner and outer) in the voltage-steadied circuit in which series connection transistor is used.

133. Patterning method, method of manufacturing organic field effect transistor, and method of manufacturing flexible printed circuit board.

134. The fine structure and the thin-film transistor can be integrated on the one insulating surface in one step.

135. The signal generation circuit includes a NPN typed switching transistor. Through a first resistance, base electrode of the switching transistor is connected to a first system power source.

136. You can use a cheap NPN transistor such as a 2N2222 to amplify this pulse, to interface with the next stage of electronics. You can also add divider ICs.

137. Transistor: Solid-state semiconductor device for amplifying, controlling, and generating electrical signals. Invented at Bell Labs (1947) by John Bardeen, Walter H. Brattain, and William B.

137. Wish you can benefit from our online sentence dictionary and make progress every day!

138. Figure 1-14 shows an NPN transistor and a PNP transistor in the feedback path to provide dual polarity operation.

139. A method for measuring and controlling the junction temperature of power transistor during succession operation life test is proposed.

140. A component whose operation depends on the control of electric or magnetic phenomena in solids, ?e. g. , ? a transistor, crystal diode, ferrite core.

141. For those of you without advanced physics degrees, what that means is that you can use water in conjunction with graphene to create an on-off switch, a transistor..

142. Transistor , also known as semiconductor transistor or bipolar transistor.

143. The main product is switching diode series, zener diode series, transistor series.

144. A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET).

145. This method is able to make the analysis and calculation of the transistor amplifier circuit tend to be simplified.

146. The invention belongs to the technical field of a microelectronic device, and more particularly discloses an asymmetrical source-drain field effect transistor and a preparation method thereof.

147. We are using this transistor to amplify a telephone signal.

148. The concepts described above are embodied in the junction transistor.

149. The high speed insulated gate bipolar transistor(IGBT) transport model is derived by ambipolar transport theory in this paper.

150. Combining with old transistor curve grapher, using single chip computer and serial port communication, the transistor characteristic curves is displayed on the microcomputer.

151. We have been considering the transistor with a current fed into the emitter.

152. PHILIPS main agent distribution of high - frequency, the transistor, FET , the modulation, IR series FET, Schottky.

153. The chopped waveshapes of an avalanche transistor and krytron electrooptics gates are compared by streak camera measurement.

154. We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.

155. P-type field effect transistor includes a second N-type buried layer and the said P-type epitaxial layer formed in the P-type substrate.

156. Thin film transistor ( TFT ) is one type of field effect transistors ( FET ).

157. A new type of transistor radio has been brought out in that factory.

158. Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.

159. A new parameter "the effective conversion transconductance " is introduced for characterizing transistor converters.

160. Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area , base, collector area, the three areas form two PN junction.

161. The aluminum foil sealer uses inductive - heating technology of Taiwan and transistor module.

162. Open the supply through all - digital control loop of insulated gate bipolar transistor - based devices to be completed.

163. The technology is based on a new organic thin-film transistor made directly on a flexible substrate, which eliminates the traditional need for rigid driver chips.

164. By using an inductive coupling transistor oscillator as an example, a simple model for the nonlinear oscillator, the Van del pol equation, is derived.

165. Aiming at the shortcoming of the typical field-effect transistor (FET) switch, this paper proposes a kind of novel FET switch.

166. A new photo detector-bipolar photo gate field-effect transistor for CMOS image sensor is presented and its analytical model is also established.

167. A particular frog's calls were recorded on one channel,() using a transistor - condenser microphone.

168. The company mainly engaged in: light-emitting diode chip, transistor, IC, NICHICON Tantalum Capacitor, WALSIN capacitors, resistors, such as paste chip components.

169. The modern successor to the transistor is the integrated circuit.

170. William Shockley was probably named by the same people that write Batman comics, because he invented the transistor.

171. Hewlett-Packard Co. sued AU Optronics Corp. alleging the Taiwanese company conspired to fix prices of thin-film transistor liquid crystal display panels, according to a court filing.

172. Peak Devices is a privately held, fabless semiconductor company that focuses on RF discrete transistor technology.

173. Surface potential based drain current model for organic thin-film transistor (OTFT) is presented considering the exponential distribution within the bandgap.

174. The computer simulation at the MOS transistor level is carried out.

175. The development of the Relay protection technology has experienced 4 phases, ranging from electromagnetism type, transistor type, integrate circuit type and microcomputer type.

176. Transistor AC millivoltmeters specially used to measure the sinusoidal voltage are limited in measuring any other waves of voltage.

177. Compared many ways of generating pulse, a design using the avalanche transistor as the main component of pulse generator module is established.

178. Using an atomic force microscope and two layers of insulators (lanthanum aluminum oxide and strontium titanium oxide), Levy and his colleagues created a nanoscale transistor.

179. Thus, the preparation of the organic field-effect transistor with mixed-contact electrodes is finished.

180. Through the experiment with the circuits thermal drift, of TYZ-3 intelligent soil nutrition gauge, J-type field effect transistor(JFET) was found as the major cause of circuits thermal drift.

181. Phase-shifted FB-ZVZCS-PWM converter solves the problem mentioned above, and insulated gate bipolar transistor(IGBT) is fit for the lag-arm.

182. This paper presents a new circuit model for designing a microwave transistor amplifier, and gives a general optimum programing.

183. For the next couple of decades advances in transistor technology drove the industry, as several companies jumped on the idea and set out to develop commercially viable versions of the device.

184. The subject of the invention is to raise the two-dimensional electron density and electron mobility of high electron mobility transistor of gallium nitride without generating short channelling effect.

185. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.

186. This paper discusses the working principle of bipolar transistor avalanche, and analyzes the circuit of ultra-wideband very narrow pulse generator adopting cascade bipolar transistor structure.

187. The field effect transistor is probably simplest three terminal active devices in current use.

188. A transistor memory cell can be made with any number of terminals.

189. The region in a transistor between the emitter and the collector.

190. For medium and small-power transistor die and the tube socket of adhesive, and adhesive components such as hybrid circuits.

191. The process is compatible to the existing double poly-silicon self-aligned NPN transistor process, which can be used to fabricate high-performance complementary bipolar circuits.

192. An insulated gate bipolar transistor (IGBT) device characterization tool allows users to quickly and accurately create average and dynamic models of power semiconductor devices.

193. The metal-oxide-semiconductor field-effect transistor (MOSFET) is the dominant device used in ultra-large-scale integrated (ULSI) circuits.

194. The different trigger points of LDMOS's intrinsic npn transistor by isothermal and non-isothermal methods are compared and analyzed.

195. An assistant 380V AC-input and multi-output switching power supply is introduced which is used in thick-film driving circuits for large-power IGBT(Insulated Gate Bipolar Transistor).

196. With regard to solid-state microwave power transistor operating in class C, reducing the operation voltage is an efficient means to improve the transistor reliability.

197. The effect of circuit parameters of avalanche transistor sweep generators on the sawtooth waveforms is discussed. To improve the sweep linearity,(/transistor.html) the bootstrap circuit is applied.

198. Similarly, the drawings representing the structures used to form the transistor logic gates and interconnects were done by hand.

199. The problem of closed-loop stability of logarithmic converters employing a bipolar transistor as logarithmic feedback element is discussed.

200. The high-speed digital frequency mixer made of medium-scale integrated circuits and the design of a high power transistor amplifier are also presented.

201. A transistor is grounded not connected to GND without connection, thereby simplifying the replacement of data in the memory cell.

202. The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.

203. By employing low dropout PMOS adjusting transistor and U pattern layout design methodology, the large current and over heat problem have been solved.

204. You can use a cheap NPN transistor such as a 2N2222 to amplify this pulse, to interface with the next stage of electronics.

205. In order to further simplify the configuration of CMOS circuits, the technique of switch sharing, which can realize sharing MOS transistor or MOS net among circuits is investigated.

206. A design flow is built, from the design of behavioral stage , transistor stage and analytic procedure.

207. By employing the standard microfabrication techniques used, for instance, in manufacturing of computer chips, the team has created a type of field-effect transistor, a vital computer component.

208. Further a sensor system comprising such a field-effect transistor and the use of a sensor system for detecting molecules is disclosed.

209. In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of PN junction and schottky junction.

210. An analysis of ionizing-radiation effects on NMOSFET with lateral parasitic transistor was studied by a two dimensional numerical simulation.

211. Based on logic gates of complementary single-electron transistor (SET), three units are proposed as follows: full adder, shift register and ROM.

212. N - channel enhancement mode vertical D - MOS transistor.

213. Switching time of the new type transistor is shortened 3 times.

214. The new bipolar junction field effect transistor(BJFET)has the features of both bipolar and junction field effect devices.

215. Die Triode nennt man auch den Transistor , einschlie & szlig ; lich PNP und NPN.

216. A conventional MOS transistor is modified to an accumulation - mode MOS varactor.

217. It will be a valuable reference to microwave pulse power transistor design.

218. One of the first terminal and the second terminal of the storage element is electrically connected to the unipolar transistor.

219. In this paper , the failure analysis of a type of high frequency power transistor is introduced .

220. There are two kinds of supply modes of collecting electrode resistance(inner and outer)in the voltage-steadied circuit of series connection transistor.

221. Field effect transistor, especially a double diffused field effect transistor, and method for the production thereof.

222. Bipolar junction transistor(BJT)has the self-heating phenomena, which seriously affects the properties of transistor.

223. The positive - going signal subtracts from the forward bias of the lower transistor.

224. The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.

225. A memory cell structure for a memory device is provided, the memory cell structure comprising a read transistor having a floating gate node, a tunnelling capacitor, and a coupling capacitor stack.

226. The characteristics, basic circuit, and working wave pattern of transistor type optical coupler and its function in electronic control unit of hydraulic discharging machine were introduced.

227. Invention of the point contact transistor by Brattain and Bardeen. ( December 23 ).

227. try its best to gather and build good sentences.

228. Provided is an insulated gate bipolar transistor (IGBT) which occupies a small area and in which a thermal breakdown is suppressed.

229. If you use a dual supply, the transistor has the additional voltage swing below ground potential to keep it in its active region and does not cut off.

230. The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.

231. Bipolar or conventional transistors are used in manufacturing transistor - transistor logic ( TTL ) and emitter - coupled logic ( ECL ) devices.

232. Three transistor dynamic cells and buffered I/O control logic are used for the device. The control circuit is optimized for Y C separation system.

233. The neuron MOS transistor is a recently invented device with high functionality.

234. The present invention can reduce the hot electron effect in low-temperature polysilicon film transistor effectively and raise the stability of low-temperature polysilicon film transistor obviously.

235. The method is worked out to determine the Boltzmann constant accurately with the aid of the I-V characteristic of the transistor diode.

236. The objective of this design is to a broadband microwave power transistor used in broadband solid state amplifier.

237. The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.

238. A convenient modulator can be formed by an emitter-follower transistor having its emitter region connected to the source or drain of the field-effect transistor.

239. This make of transistor radio is small and beautifully designed.

240. A transistor needs to be completely semiconducting to hold information, Tour says.

241. At the end, we could use the spec which determined by matlab model and verilog-A model to finish the transistor circuit design.

242. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by relative low-temperature sublimation or solution-phase deposition onto a substrate.

243. Transistor thermal spectrum, as a new method, different from the commonly infrared thermogram, is introduced to characterize the non-uniform property of the junction temperature distribution.

244. Cadmium sulphide or cadmium selenide in polymer based thin film transistor.

245. The characteristic of power switch of bipolar junction transistor(BJT) and the wireless receiving and sending technique are used to carry out the property of low cost and convenient to carry.

246. Experimenting repeatedly, by our limited equipments we provided the qualified photomask for the study of 3DG460 microwave low-noise transistor.

247. So silicon nanowires exhibit excellent application promising in nanoscale electron devices such as field effect transistor and memory cell.

248. A trench DMOS transistor structure is provided that includes at least three individual trench DMOS transistor cells formed on a substrate of a first conductivity type.

249. Therefore, engineers must evaluate transistor characteristics as quickly as possible after the stress is removed.

250. The power source used 14 power file effect transistor MOSFET in power transformer second order; all the combinations of twist-coil could construct 18 different second orders.

251. The relative sensitivity of the sector split-drain field-effect transistor is studied by two methods:1. Numerical simulation.

252. This paper deals with period doubling, period- adding and chaotic behavier in the unijunction transistor second order circuit. The mechanism of bifurcation and chaos is discussed.

253. Thermal failure of a type of microwave power transistor was analyzed and discussed, the power aging failure happened in the process of screening test.

254. The unbiased Darlington transistor was utilized to avoid crossover distortion and to improve power output for homing transmitting system.

255. These tiny mirrors can be tilted electrostatically, using a voltage applied by a thin-film transistor of the sort employed to control liquid-crystal pixels.

256. TI introduces the silicon - based transistor which soon eclipsed germanium devices in production volume.

257. High - power transistor drive is not affected by high frequencies.

257. try its best to collect and make good sentences.

258. Switching time of the new type transistor is shortened three times.

259. A bootstrapped switch with dummy transistor is used to reduce the signal-dependent charge injection and clock feedthrough.

260. A new ultra-wideband(UWB) Gaussian pulse generator composed of a step recovery diode(SRD), a field-effect transistor(FET) and a Schottky diode was developed.

261. Depletion Model Selective doped heterojunction transistor is designed and fabricated.

262. Double pole transistor in power device is major and the apply of IGBT will be more and more.

263. It is pointed out that there are some questions determining configuration of single transistor amplifier, the general method and common circuit are given.

264. To create an reset input to the supervisory chip, its input must receive an active-low ground signal, requiring transistor Q1 to turn on.

265. The collector voltage of the switching transistor is determined by the voltage of the power network.

266. The A1210-A1214 Hall-effect latches include the following on a single silicon chip: voltage regulator, Hall-voltage generator, small-signal amplifier, Schmitt trigger, and NMOS output transistor.

267. The switching time of this new transistor reduced three times.

268. For example, the scan line and the gate terminal of the driving transistor are connected through a rectifying element.

269. A low dielectric material, acrylate resin has been investigated as a passivation dielectric layer for thin-film transistor (TFT) arrays in this paper.

270. SOI technology is used to reduce the device capacitance and increase transistor performance.

271. FPGAs rely on the ubiquitous transistor - based technology called complementary metal oxide semiconductor ( CMOS ).

272. PHEMT transistor ( ATF - 35143 ) is used in this design.

273. Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET) .

274. We work with a completely new transistor concept, in which a carbon nanotube or a single organic molecule takes the place of the traditional semi-conductor transistor.

275. This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).

276. The principle of PAM PWM compound control and the power transistor AC adjustable speed system based on that principle are presented in this paper.

277. In this paper, the design of a low noise microwave transistor amplifier at 10cm-band is described.

278. Simulate the avalanche circuit in series with PSPICE module, design the high voltage short plus generation circuit by avalanche transistor in series for the sweep deflection circuit of streak camera.

279. The paper describes a silent voltage source PWM frequency converter. Its main circuit uses novel full controlled devices bipolar static induction transistor(BSIT) and static induction thyristor(SITH).

280. Especially, the circuit of NAND gate my be totally made by NPN transistor, and the circuit structure is simple, easily is complicated by Integrate Circuit.

281. Within the last few decades, the electron tube has been largely replaced by the transistor.

282. To create nanoscale transistor junctions, engineers can crisscross different types of semiconducting strands, thereby stacking the materials in layers crucial for manipulating electron flow.

283. The gate of the field effect transistor is connected to the drain of field effect transistor.

284. This article has analysed the active filterable electric circuit in principle and shown you another one consisted of compound transistor with better effect of filtration.

285. In practical terms, this smallest feature was almost always the line that defined the gate electrode on the MOS transistor.

286. Threshold voltage window is approx 17V, and this transistor has nondestructive readout characteristic.

287. A transistor has three electrodes, the emitter, the base and the collector.

288. Both the fundamental properties and switching properties of compound switching transistor are discussed. The experimental test data and the practical examples of the application circuit are provided.

289. The article introduced the principle and apply of the transistor avalanche through four example of transistor oscillator, avalanche oscillator, audio signal generator, flash metronome.

290. Brattain:American physicist. He shared a 1956 Nobel Prize for developing the electronic transistor.

291. The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.

292. The auto Die Bonder for SOT - 23 transistor is a high - speed , high - precision, machinery electronics integrated equipment.

293. A design of boost converter using high-power insulated bipolar transistor IGBT module named SKM75GAL123D and driver module named EXB840 is introduced.

294. Back then Egyptians were lucky to own a transistor radio. Now two-thirds of homes have a satellite receiver, 87% own a fridge, 97% have piped water and 99% have electricity.