1. An advanced niobium - silicide based ultrahigh temperature alloy was prepared by vacuum consumable arc - melting method.

2. We have a production line of organic chloride, silicide, nitride compounds and etc.

3. A suitable inoculant , such as calcium silicide or equivalent, is to be added to the metal stream as the furnace is tapped.

4. The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.

5. The silicide coatings obtained in the fluidized - bed are similar to those prepared by other methods.

6. In the first section, the improvement of nickel silicide on the junction diode was demonstrated.

7. The application of titanium silicide in integrated circuits was emphatically introduced.

8. In particular, when the refractory metal silicide film is a tungsten silicide film, the concentration of Cu is preferable that it is in the range of 0.1 to 1.0 wt. %.

9. The silicide layer formed at interface was thought to induce the in plane magnetic anisotropy in the sandwiches, which consequently resulted in the high field sensitivity of GMR.

10. When growing silicide electrode, the thick silicide can punch through the shallow source and form Ohm contact with body below that has high dopant concentration.

10. try its best to gather and create good sentences.

11. Theuse of multilayer film in imitation of codeposition can realize shallow silicide contacts.

12. In this thesis, we will provide a novel application of nickel silicide on photo detector.

13. Our company is a joint-stock company operated under the modern corporation system. We have a production line of organic chloride, silicide, nitride compounds and etc.

14. In addition , the oxidized Si surface can also suppress the formation of the silicide phase.

15. Carbene and silylene are two kinds of reactive activity intermediates which belong to carbide and silicide separately, but they are quite similar.

16. The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.

17. The electron beam induced current ( EBIC ) character of palladium silicide - silicon ( P - type ) Schottky Barrier Diode ( SBD ) is observed.