1. In electromigration, the expressions to atomic flux and Ni-Sn IMC growth rate have been derived from the phenomenological equations.

2. On studying of electromigration on lead-free solder joints, the theories and the current studies on electromigration have been introduced firstly.

3. Electromigration in metal thin film interconnection is one of the important problems for VLSI reliability.

4. Electromigration is the movement of metal atoms in the direction of current flow.

5. Electromigration effect is still a dominating failure mechanism of interconnect for deep submicron and ultra-deep submicron scale.

6. Electromigration dispersion ( EMD ) is one of major effects on zone broadening in capillary electrophoresis.

7. Having 40% lower resistivity than Al and good electromigration resistance,(/electromigration.html) Cu is being considerably studied as candidate of Al.

8. Two main methods, accelerated lifetime test and drift velocity test, to study electromigration are described.

9. On the other hand, high supply flowing through the power grids may cause electromigration failures.

10. To improve the technique, both the values of parameters in physical model of electromigration and the statistic distribution property of the parameters are needed.

11. Electromigration Induced Cu Dissolution in Flip Chip Packages The phenomenon of Cu dissolution induced by electromigration at flip chip solder joints is reported.

12. In many issues of the reliability of copper interconnection, we place the emphasis on electromigration and stress migration.

13. With the development of large-scale integrated circuits(), the reliability caused by electromigration becomes a key issue.

14. Atoms in the solder joints move as a result of both diffusion and electromigration.

15. Therefore, the reasons and the influencing factors of IR-drop and electromigration are discussed firstly.

16. If a direct current electric field was applied to a polluted soil, the contamination would be motivated in a different way by the electroosmosis and electromigration.

17. Consequently, the metal interconnects of VLSI have smaller sectional area and carry increasing power density, which made the electromigration become one of the main latent damage modes.

18. A novel structure has been designed and applied in metallization system of microwave power device, in which backflow effect is taken to increase the electromigration resistance.

19. Tungsten is widely used in multi - level interconnection due to its excellent gap filling and anti - electromigration capability.

20. The different temperature generates the difference of atomic fluxes and IMCs growth rates at the cathode, which also causes the nonuniform electromigration degree in different solder joints.

21. So it is very necessary to study the wettability of lead-free solders and electromigration of solder joints.

22. The non-gaussian noise origined from the danamical mechanism , so electromigration danamical information can obtained from non-gaussian analysis of the danamical parameter .

23. In this thesis, we focuse on the microstructure and stress of ULSI Cu interconnects with their impacts on MTF of the electromigration.