1. Carbon nanotube field effect transistor is the study of the Hotspot. It is the device that be most likely to replace the MOSFET and keep Moore's law in all molecular electronic devices.

2. A hetero-structure field effect transistor (HFET), may include a first layer (3) made from a first semiconductor material and a second layer (4) made from a second semiconductor material.

3. Patterning method, method of manufacturing organic field effect transistor, and method of manufacturing flexible printed circuit board.

4. Project 2: Using field effect transistor (FET) as the amplifier components would be more convenient to use and also it costs much less power than it does for dynatron.

5. P-type field effect transistor includes a second N-type buried layer and the said P-type epitaxial layer formed in the P-type substrate.

6. The field effect transistor is probably simplest three terminal active devices in current use.

7. The new bipolar junction field effect transistor(BJFET)has the features of both bipolar and junction field effect devices.

8. Field effect transistor, especially a double diffused field effect transistor, and method for the production thereof.

9. The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.

10. The invention provides a field effect transistor device using a carbon nano tube as an electrode and a preparation method thereof.

10. try its best to gather and build good sentences.

11. Based on this, infrared detector and field effect transistor were fabricated and also tested.

12. The gate of the field effect transistor is connected to the drain of field effect transistor.

13. In 2003, he initiated a research work on Si nanowire field effect transistor.

14. In recent years, rapid development has been made in the research of ISFET (Ion-Sensitive Field Effect Transistor) as biosensors.

15. These data and results are helpful to design and develop spin field effect transistor, spin light-emitting diode, spin resonant tunneling device, etc.

16. An efficient, self-consistent method of Monte Carlo and Poisson equation is used to simulate the electrical characteristic of deep submicron metal-oxide-semiconductor field effect Transistor(MOSFET).

17. The invention belongs to the technical field of a microelectronic device, and more particularly discloses an asymmetrical source-drain field effect transistor and a preparation method thereof.

18. Through the experiment with the circuits thermal drift, of TYZ-3 intelligent soil nutrition gauge, J-type field effect transistor(JFET) was found as the major cause of circuits thermal drift.

19. Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.

20. So silicon nanowires exhibit excellent application promising in nanoscale electron devices such as field effect transistor and memory cell.

21. A high stability LC-oscillator with a zero temperature coefficient field effect transistor (FET) as its active part is presented.

22. Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET) .