1. Features: Low saturation voltage, excellent DC current gain characteristics.

2. Purpose: Applications requiring extremely high current gain device designed.

3. Features: Low saturation voltage, high DC current gain.

4. Features: High DC current gain, low saturation voltage,[http://] high col lector power dissipation.

5. We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.

6. Features: High DC current gain and excellent hFE linearity, low saturation voltage.

7. For logic devices, the incremental current gain is very important.

8. Features: Low VCE ( sat ) , excellent DC current gain characteristics.

9. Such MSM structure can also be formed into a transverse phototransistor with its common-emitter current gain from 2 to'4.

10. Features: Low VCE ( sat ) , excellent DC current gain characteristics , wide SOA.

11. Double-polysilicon RCA transistors, with both less temperature dependence on current gain and higher cut-off frequency, are fabricated.